Manufacturer Part Number
APT13005SU-G1
Manufacturer
Diodes Incorporated
Introduction
High-voltage, high-power NPN bipolar junction transistor (BJT)
Product Features and Performance
Wide operating temperature range: -65°C to 150°C
High power handling capability: 20W
High collector-emitter breakdown voltage: 450V
High collector current: 3.2A
Low collector-emitter saturation voltage: 1V @ 750mA, 3A
High current gain: 8 @ 2A, 5V
High transition frequency: 4MHz
Product Advantages
Robust and reliable performance
Suitable for high-voltage, high-power applications
Excellent electrical characteristics
Key Technical Parameters
Package: TO-126
Collector-Emitter Breakdown Voltage (VCEO): 450V
Collector Current (IC): 3.2A
Collector-Emitter Saturation Voltage (VCE(sat)): 1V @ 750mA, 3A
Current Gain (hFE): 8 @ 2A, 5V
Transition Frequency (fT): 4MHz
Quality and Safety Features
RoHS3 compliant
Suitable for through-hole mounting
Compatibility
Compatible with various high-voltage, high-power electronic applications
Application Areas
Switch mode power supplies
Motor drives
Lighting ballasts
Industrial controls
Audio amplifiers
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
Robust and reliable performance in high-voltage, high-power applications
Excellent electrical characteristics, including high voltage, high current, and high-speed switching capabilities
Wide operating temperature range suitable for demanding environments
RoHS3 compliance for environmental responsibility
Availability of through-hole mounting options for easy integration