Manufacturer Part Number
APT12057JFLL
Manufacturer
Microchip Technology
Introduction
High-voltage N-channel MOSFET transistor for power switching applications
Product Features and Performance
Drain-to-Source voltage (Vdss) up to 1200V
On-resistance (Rds(on)) as low as 570mΩ @ 9.5A, 10V
Continuous drain current (Id) up to 19A at 25°C
Input capacitance (Ciss) of 5155pF @ 25V
Gate-to-source threshold voltage (Vgs(th)) of 5V @ 2.5mA
Gate charge (Qg) of 185nC @ 10V
Product Advantages
Suitable for high-voltage power conversion and switching applications
Excellent conduction and switching performance
Compact ISOTOP package for efficient heat dissipation
Key Technical Parameters
Drain-to-Source voltage (Vdss): 1200V
On-resistance (Rds(on)): 570mΩ @ 9.5A, 10V
Continuous drain current (Id): 19A @ 25°C
Input capacitance (Ciss): 5155pF @ 25V
Gate-to-source threshold voltage (Vgs(th)): 5V @ 2.5mA
Gate charge (Qg): 185nC @ 10V
Quality and Safety Features
RoHS3 compliant
ISOTOP package for efficient heat dissipation
Compatibility
Suitable for high-voltage power conversion and switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Currently available
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
High-voltage capability (1200V)
Low on-resistance (570mΩ) for efficient power conversion
High continuous drain current (19A) for high-power applications
Compact ISOTOP package for efficient heat dissipation
Excellent conduction and switching performance
RoHS3 compliance for environmental friendliness