Manufacturer Part Number
APT12057JLL
Manufacturer
Microsemi
Introduction
High-voltage, N-channel power MOSFET
Product Features and Performance
High breakdown voltage of 1200V
Low on-resistance of 570 mΩ
High continuous drain current of 19A
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 6200 pF
High power dissipation capability of 520W
Product Advantages
Excellent power handling capability
High efficiency and low power losses
Suitable for high-voltage and high-power applications
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 570 mΩ @ 10A, 10V
Continuous Drain Current (Id): 19A @ 25°C
Input Capacitance (Ciss): 6200 pF @ 25V
Power Dissipation (Tc): 520W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Compatibility
Chassis mount package (SOT-227)
Application Areas
High-voltage, high-power switching applications
Industrial power electronics
Renewable energy systems
Power supplies and converters
Product Lifecycle
This product is currently available and is not nearing discontinuation. Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust design
Wide operating temperature range
Suitable for high-voltage, high-power applications
RoHS3 compliance for environmental safety
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