Manufacturer Part Number
APT12067JLL
Manufacturer
Microsemi
Introduction
High-voltage, high-current N-channel MOSFET transistor for power electronics applications
Product Features and Performance
1200V drain-source voltage
17A continuous drain current at 25°C
570mΩ maximum on-resistance at 10A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 6200pF at 25V
460W maximum power dissipation
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Wide temperature range for diverse applications
Small footprint SOT-227 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 570mΩ @ 10A, 10V
Continuous Drain Current (Id): 17A @ 25°C
Input Capacitance (Ciss): 6200pF @ 25V
Power Dissipation (Ptot): 460W @ Tc
Quality and Safety Features
RoHS non-compliant
Suitable for chassis mount applications
Compatibility
Designed for use in power electronics and power conversion circuits
Application Areas
Switching power supplies
Motor drives
Inverters
Solar power systems
Product Lifecycle
This product is an active part in the Microsemi product lineup
Replacement or upgrade options may be available, consult Microsemi for details
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding power applications
Low on-resistance for efficient power conversion
Wide operating temperature range for diverse environmental conditions
Small, compact SOT-227 package for space-constrained designs