TS5A3160DCKR - Texas Instruments

Manufacturer Part Number

TS5A3160DCKR

Manufacturer

Texas Instruments

Introduction

TS5A3160DCKR is an SPDT analog switch designed for multiple applications that require low on-state resistance and fast switching speeds.

Product Features and Performance

Single Pole Double Throw (SPDT) configuration

2:1 Multiplexer/Demultiplexer circuit

Ultra-low on-state resistance of 900mOhm

Channel-to-channel matching (ΔRon) of 50mOhm

Operates from a single supply voltage of 1.65V to 5.5V

Fast switch time of 6ns (on) and 13ns (off)

-3db Bandwidth of 100MHz

Charge Injection is 36.5pC

Low channel capacitance of 18pF

Maximum leakage current of 20nA

Crosstalk minimized to -64dB at 10MHz

Product Advantages

Efficient single supply operation

High-performance specifications for precise signal routing

Minimal signal distortion and interference

Robust operating temperature range of -40°C to 85°C

Key Technical Parameters

On-State Resistance (Max): 900mOhm

Voltage Supply, Single (V+): 1.65V ~ 5.5V

Switch Time (Ton, Toff) (Max): 6ns, 13ns

Channel Capacitance (CS(off), CD(off)): 18pF

Operating Temperature: -40°C ~ 85°C

Quality and Safety Features

Low leakage and high isolation ensure signal integrity

Built to handle a wide range of operating temperatures

Compatibility

Compatible with Tape & Reel (TR) packaging for automated assembly

Compatible with a wide range of signals due to its 1.65V to 5.5V operational range

Application Areas

Used in:

Consumer Electronics

Telecommunications

Data Acquisition Systems

Test Equipment

Product Lifecycle

Currently active status

No indication of nearing discontinuation

Availability of replacements or upgrades currently stable

Key Reasons to Choose This Product

Superior signal integrity with low crosstalk and high bandwidth

Versatile single supply operation suitable for various applications

Reliable performance in diverse temperature environments

Quick switching time for high-speed applications

Enhanced durability through low on-state resistance and minimal charge injection