Manufacturer Part Number
FJT44KTF
Manufacturer
Texas Instruments
Introduction
A high-voltage, high-power NPN bipolar junction transistor (BJT)
Product Features and Performance
Capable of handling high voltages up to 400V
High current capability of up to 300mA
Low collector-emitter saturation voltage of 750mV
Wide operating temperature range up to 150°C
Product Advantages
Suitable for high-voltage, high-power applications
Reliable performance even under high-temperature conditions
Efficient power handling capabilities
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 400V
Current Collector (Ic) (Max): 300mA
Current Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power Max: 2W
Operating Temperature: 150°C (TJ)
Quality and Safety Features
Designed and manufactured to high quality standards
Complies with relevant safety regulations
Compatibility
Compatible with various surface mount (SMT) assembly processes
Application Areas
Suitable for high-voltage, high-power applications such as:
- Switching power supplies
- Motor drives
- Industrial controls
- Lighting systems
Product Lifecycle
Current product offering
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Robust high-voltage and high-power handling capabilities
Reliable performance in high-temperature environments
Efficient power management through low saturation voltage
Compatibility with common surface mount assembly processes
Ongoing product support and potential upgrade options