Manufacturer Part Number
FMMT558TA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product - Bipolar (BJT) Transistor, Single
Product Features and Performance
Operating Temperature Range: -55°C to 150°C
Max Power: 500 mW
Max Collector-Emitter Breakdown Voltage: 400 V
Max Collector Current: 150 mA
Max Collector Cutoff Current: 100 nA
Max Collector-Emitter Saturation Voltage: 500 mV @ 6 mA, 50 mA
Transistor Type: PNP
Minimum DC Current Gain (hFE): 100 @ 50 mA, 10 V
Transition Frequency: 50 MHz
Product Advantages
High voltage and current handling capability
Low saturation voltage
Good current gain
High transition frequency
Key Technical Parameters
Operating Temperature Range: -55°C to 150°C
Max Power: 500 mW
Max Collector-Emitter Breakdown Voltage: 400 V
Max Collector Current: 150 mA
Transistor Type: PNP
Minimum DC Current Gain (hFE): 100 @ 50 mA, 10 V
Transition Frequency: 50 MHz
Quality and Safety Features
ROHS3 Compliant
Compatibility
Package: SOT-23-3
Mounting Type: Surface Mount
Application Areas
General purpose PNP bipolar transistor applications
Product Lifecycle
Current product, no discontinuation or replacement plans known
Several Key Reasons to Choose This Product
High voltage and current handling capability
Low saturation voltage for efficient operation
Good current gain for amplifier and switch applications
High transition frequency for high-speed switching
Small surface mount package for dense circuit designs
ROHS3 compliant for environmental restrictions
FMMT5550TADiodes Incorporated
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