Manufacturer Part Number
FMMT549ATA
Manufacturer
Diodes Incorporated
Introduction
Discrete Semiconductor Product
Single Bipolar Junction Transistor (BJT)
Product Features and Performance
RoHS3 Compliant
SOT-23-3 Package
Operating Temperature Range: -55°C to 150°C
Power Rating: 500 mW
Collector-Emitter Breakdown Voltage: 30 V
Collector Current (Max): 1 A
Collector Cutoff Current (Max): 100 nA
Collector-Emitter Saturation Voltage: 300 mV @ 1 mA, 100 mA
DC Current Gain (hFE): 150 Min @ 500 mA, 2 V
Transition Frequency: 100 MHz
Product Advantages
Compact SOT-23-3 surface mount package
Wide operating temperature range
High power and current handling capability
Low saturation voltage for efficient switching
Key Technical Parameters
Transistor Type: PNP
Package: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuit designs requiring a PNP bipolar junction transistor
Application Areas
Suitable for use in power supplies, amplifiers, switches, and other electronic circuits
Product Lifecycle
Currently available product, no indication of discontinuation
Key Reasons to Choose This Product
Compact package size for space-constrained designs
Wide operating temperature range for reliable performance
High power and current handling capability for demanding applications
Low saturation voltage for efficient switching and power conversion
Compatible with a variety of electronic circuit designs