FJT44KTF - onsemi

Manufacturer Part Number

FJT44KTF

Manufacturer

onsemi

Introduction

Bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications

Product Features and Performance

Capable of operating at high voltages up to 400 V

Supports high current handling up to 300 mA

Low collector-emitter saturation voltage (VCE(sat)) of 750 mV at 5 mA, 50 mA

Minimum DC current gain (hFE) of 50 at 10 mA, 10 V

Product Advantages

Suitable for high-voltage, high-current applications

Excellent electrical characteristics for amplifier and switching circuits

Compact surface-mount package (SOT-223-4)

Key Technical Parameters

Collector-Emitter Breakdown Voltage (VCEO): 400 V

Collector Current (IC): 300 mA

Collector Cutoff Current (ICBO): 500 nA

Power Dissipation: 2 W

Operating Temperature Range: -55°C to +150°C

Quality and Safety Features

RoHS 3 compliant

Meets industrial-grade reliability standards

Compatibility

Compatible with various electronic circuits and systems requiring high-voltage, high-current transistors

Application Areas

General-purpose amplifier and switching circuits

Power supplies

Motor control

Industrial electronics

Product Lifecycle

Currently in production

No plans for discontinuation, replacement, or upgrade at this time

Key Reasons to Choose This Product

Excellent high-voltage and high-current capabilities

Compact surface-mount package for efficient board space utilization

Reliable performance and long-term stability

RoHS 3 compliance for use in various applications