RUC002N05T116 - Rohm Semiconductor

Manufacturer Part Number

RUC002N05T116

Manufacturer

LAPIS Technology

Introduction

The RUC002N05T116 is a discrete N-channel MOSFET transistor from LAPIS Technology.

Product Features and Performance

MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology

N-channel configuration

50V drain-to-source voltage (Vdss)

200mA continuous drain current (Id) at 25°C

2Ω maximum on-resistance (Rds(on)) at 200mA, 4.5V

25pF maximum input capacitance (Ciss) at 10V

200mW maximum power dissipation (Ta)

-55°C to 150°C operating temperature range

Product Advantages

Low on-resistance for efficient power switching

Compact surface mount package

Wide operating temperature range

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 50V

Gate-to-Source Voltage (Vgs): ±8V

On-Resistance (Rds(on)): 2.2Ω @ 200mA, 4.5V

Drain Current (Id): 200mA (Ta)

Input Capacitance (Ciss): 25pF @ 10V

Power Dissipation (Max): 200mW (Ta)

Quality and Safety Features

RoHS3 compliant

Tape and reel packaging

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and applications that require a small, high-performance switching device.

Application Areas

Power management circuits

Switching regulators

Motor control

General-purpose switching applications

Product Lifecycle

The RUC002N05T116 is an active product and no discontinuation or replacement is currently planned.

Key Reasons to Choose This Product

Low on-resistance for efficient power switching

Small surface mount package for compact designs

Wide operating temperature range suitable for various environments

RoHS3 compliance for use in environmentally-conscious applications

Tape and reel packaging for automated assembly