Manufacturer Part Number
NTD4909NT4G
Manufacturer
onsemi
Introduction
The NTD4909NT4G is a high-performance N-channel power MOSFET designed for a wide range of power conversion and control applications.
Product Features and Performance
30V drain-source voltage
Low on-resistance of 8mΩ at 30A, 10V
High current capability of 8.8A continuous at 25°C
Fast switching with a gate charge of 17.5nC at 10V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power efficiency due to low on-resistance
High current handling capability
Reliable performance across wide temperature range
Fast switching for high-frequency applications
Key Technical Parameters
Drain-Source Voltage (VDS): 30V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 8mΩ @ 30A, 10V
Continuous Drain Current (ID): 8.8A @ 25°C, 41A @ 100°C
Input Capacitance (CISS): 1314pF @ 15V
Power Dissipation (Pd): 1.37W @ 25°C, 29.4W @ 100°C
Quality and Safety Features
RoHS3 compliant
DPAK package for improved thermal performance
Compatibility
Surface mount package (DPAK)
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power efficiency and high current capability
Wide operating temperature range for reliable performance
Fast switching for high-frequency applications
Compact and thermally efficient DPAK package
RoHS3 compliance for environmental responsibility