Manufacturer Part Number
NTD4906NAT4G
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET device suitable for a variety of power switching and control applications.
Product Features and Performance
Low on-resistance for high efficiency
Fast switching for high-frequency operation
Optimized for high-current, high-power applications
Suitable for use in switching power supplies, motor drives, and other power electronics circuits
Product Advantages
Excellent power efficiency
High-speed switching capability
Robust and reliable performance
Suitable for high-current, high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 30 V
On-Resistance (Rds(on)): 5.5 mΩ @ 30 A, 10 V
Drain Current (Id): 10.3 A (Ta), 54 A (Tc)
Input Capacitance (Ciss): 1932 pF @ 15 V
Gate Threshold Voltage (Vgs(th)): 2.2 V @ 250 A
Gate Charge (Qg): 24 nC @ 10 V
Quality and Safety Features
Robust MOSFET construction for high reliability
Compliance with industry safety and quality standards
Compatibility
Compatible with a wide range of power electronics circuits and applications
Application Areas
Switching power supplies
Motor drives
Power conversion and control circuits
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Excellent power efficiency and high-speed switching for improved system performance
Robust and reliable design for long-term, high-current operation
Suitable for a wide range of power electronics applications
Backed by the manufacturer's quality and safety assurance
NTD4906N-1GonsemiMOSFET N-CH 30V 10.3A/54A IPAK