Manufacturer Part Number
DN2530N3-G
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
TO-92 (TO-226) Package
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 300V
Gate to Source Voltage (Vgs) Max: ±20V
On-Resistance (Rds On) Max: 12Ω @ 150mA, 0V
MOSFET Technology
Continuous Drain Current (Id) Max: 175mA @ 25°C
Input Capacitance (Ciss) Max: 300pF @ 25V
Depletion Mode FET
Power Dissipation Max: 740mW @ 25°C
N-Channel FET
Drive Voltage: 0V
Through Hole Mounting
Product Advantages
High Voltage Capability
Low On-Resistance
Wide Operating Temperature Range
Compact TO-92 Package
Key Technical Parameters
Voltage Rating: 300V
Current Rating: 175mA
On-Resistance: 12Ω
Power Dissipation: 740mW
Quality and Safety Features
ROHS3 Compliant
Compatibility
Suitable for applications requiring high voltage, low on-resistance N-channel MOSFET transistors
Application Areas
Power electronics
Switching circuits
Motor control
Industrial automation
Product Lifecycle
Current product, no indications of discontinuation
Replacement or upgraded products may be available in the future
Key Reasons to Choose
High voltage capability
Low on-resistance
Wide operating temperature range
Compact package
Proven reliability from Microchip Technology