DN2540N3-G - Microchip Technology

Manufacturer Part Number

DN2540N3-G

Manufacturer

Microchip Technology

Introduction

High-voltage, depletion-mode N-Channel MOSFET

Product Features and Performance

Designed for high-voltage, high-power switching applications

Capable of operating at high temperatures up to 150°C

Provides low on-resistance (RDS(on)) of 25Ω at 120mA

Features high drain-to-source voltage (Vds) of 400V

Supports wide gate-to-source voltage (Vgs) range of ±20V

Offers low input capacitance (Ciss) of 300pF at 25V

Product Advantages

Excellent high-voltage switching performance

Robust design for high-temperature operation

Efficient power handling with low on-resistance

Versatile voltage range for diverse applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 400V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (RDS(on)): 25Ω @ 120mA, 0V

Continuous Drain Current (ID): 120mA at 25°C

Input Capacitance (Ciss): 300pF @ 25V

Power Dissipation (Ptot): 1W at Tc

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

TO-92 (TO-226) through-hole package

Application Areas

High-voltage, high-power switching circuits

Power management systems

Industrial and automotive electronics

Product Lifecycle

This product is currently in active production and availability.

Replacements or upgrades may be available in the future, but no discontinuation is planned at this time.

Key Reasons to Choose This Product

Excellent high-voltage switching performance

Robust design for high-temperature operation

Efficient power handling with low on-resistance

Versatile voltage range for diverse applications

Manufactured to high quality and safety standards

Readily available in the standard TO-92 (TO-226) package