Manufacturer Part Number
DN2450N8-G
Manufacturer
Microchip Technology
Introduction
High voltage, low on-resistance N-channel depletion mode MOSFET
Product Features and Performance
High drain-source breakdown voltage of 500V
Low on-resistance of 10Ω @ 300mA, 0V
Continuous drain current of 230mA at 25°C
Input capacitance of 200pF @ 25V
Operating temperature range of -55°C to 150°C
Product Advantages
Suitable for high voltage applications
Efficient power switching with low on-resistance
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 500V
Gate-Source Voltage (Vgs): ±20V
Resistance Drain-Source (Rds(on)): 10Ω @ 300mA, 0V
Continuous Drain Current (Id): 230mA @ 25°C
Input Capacitance (Ciss): 200pF @ 25V
Quality and Safety Features
RoHS3 compliant
TO-243AA (SOT-89) package for surface mount
Compatibility
Can be used in various high voltage, power switching applications
Application Areas
Power supplies
Motor drives
Industrial controls
Lighting ballasts
Product Lifecycle
This product is currently in production and widely available
No known plans for discontinuation or replacement at this time
Several Key Reasons to Choose This Product
High voltage capability up to 500V
Low on-resistance for efficient power switching
Wide operating temperature range of -55°C to 150°C
Compact surface mount package
RoHS3 compliance for environmental safety