Manufacturer Part Number
TC58NYG2S0HBAI6
Manufacturer
Toshiba Memory America
Introduction
The TC58NYG2S0HBAI6 is a high-performance 4Gbit NAND FLASH memory module designed for advanced data storage solutions.
Product Features and Performance
Capacity: 4Gbit
Type: FLASH - NAND (SLC)
Memory organization: 512M x 8
Interface: Parallel
Write cycle time: 25ns
Access time: 25ns
Enhanced data retention and endurance
Product Advantages
High-speed performance
Stable and reliable data storage
Low power consumption
Extended operating temperature range
Key Technical Parameters
Memory size: 4Gbit
Memory interface: Parallel
Voltage supply range: 1.7V to 1.95V
Operating temperature: -40°C to 85°C
Quality and Safety Features
Rigorous testing for temperature and voltage variations
Compliance with international safety standards
Compatibility
Designed for use in advanced digital applications
Optimized for systems requiring high speed and reliability in data handling
Application Areas
Mobile devices
Industrial applications
Data centers
Consumer electronics
Product Lifecycle
Status: Active
No indication of discontinuation
Available for new designs and existing systems
Several Key Reasons to Choose This Product
Superior storage capacity of 4Gbit in a compact form factor
Fast access and write speeds enhancing device performance
Robust temperature range suitable for various environments
Reliability and durability for critical application needs
Broad compatibility ensuring easy integration into multiple platforms
TC58NYG2S3ETAIOTAEC Product (Toshiba Electronic Devices and Stora