Manufacturer Part Number
TC58NYG0S3HBAI6
Manufacturer
Toshiba Memory America
Introduction
The TC58NYG0S3HBAI6 is a high-performance FLASH - NAND (SLC) memory module designed by Toshiba Memory America for extensive data storage and management needs in a non-volatile memory format.
Product Features and Performance
Non-Volatile FLASH Memory
Utilizes NAND technology, specifically SLC type
Parallel memory interface for efficient data handling
Suited for high-speed applications with 25ns write cycle time and 25ns access time
Product Advantages
High reliability and durability under varying temperature ranges
Superior write and read performance
Extensive data retention and easy integration due to standard VFBGA packaging
Key Technical Parameters
Memory Size: 1Gbit
Memory Organization: 128M x 8
Memory Interface: Parallel
Voltage Supply: 1.7V to 1.95V
Operating Temperature: -40°C to 85°C
Write Cycle Time Word, Page: 25ns
Access Time: 25 ns
Quality and Safety Features
Rigorous temperature testing from -40°C up to 85°C ensures functionality under extreme conditions
Sturdy surface mount 67-VFBGA packaging to safeguard the module's integrity
Compatibility
Compatible with various applications requiring high-speed non-volatile memory storage
Surface mount technology facilitates adaptable PCB design
Application Areas
Mobile devices
Embedded systems
Internet of Things (IoT) devices
High-performance computing applications
Product Lifecycle
The product is currently active
Continuously supported with no indication of near future discontinuation
Several Key Reasons to Choose This Product
Toshiba Memory America’s reputation for reliability and quality
High speed, durability, and extended temperature range support complex applications
Non-volatile, saving data without power
Adaptable to a wide range of high-tech applications
Efficient data management with fast access and write speeds
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