Manufacturer Part Number
TC58NYG2S0HBAI4
Manufacturer
Toshiba Memory America
Introduction
High-performance NAND flash memory
Product Features and Performance
Non-Volatile FLASH memory
SLC NAND Technology for reliability and endurance
4Gbit Memory Size offering substantial storage
High-speed Write Cycle Time of 25ns
Product Advantages
Durable under extreme temperatures
Highly reliable for critical applications
Long data retention
Key Technical Parameters
NAND Type: SLC
Memory Size: 4Gbit
Organization: 512M x 8
Supply Voltage: 1.7V to 1.95V
Operating Temperature: -40°C to 85°C
Write Cycle Time: 25ns
Quality and Safety Features
Operates reliably in industrial temperature ranges
Quality assurance of Toshiba Memory America
Compatibility
Surface Mount compatible
Standard 63-VFBGA package
Application Areas
Embedded systems
Industrial applications
High-reliability data storage
Telecommunications
Networking infrastructure
Product Lifecycle
Active Product Status
Not nearing discontinuation
Potential future upgrades or replacements available
Several Key Reasons to Choose This Product
Highly reliable SLC NAND technology
Wide operating temperature range
Fast write cycle suitable for performance-demanding applications
Renowned manufacturer known for quality and durability
Substantial storage capacity for various applications
Energy-efficient operation with low voltage supply requirements
TC58NYG1S8HBAI6TAEC Product (Toshiba Electronic Devices and Stora