Manufacturer Part Number
TC58NYG0S3HBAI4
Manufacturer
Toshiba Memory America
Introduction
The TC58NYG0S3HBAI4 is a 1Gbit NAND flash memory chip manufactured by Toshiba Memory America. It features a parallel interface, SLC (Single-Level Cell) technology, and a compact 63-VFBGA package. This product is designed for a wide range of applications requiring reliable and high-performance non-volatile memory storage.
Product Features and Performance
Memory Size: 1Gbit
Memory Organization: 128M x 8
Memory Interface: Parallel
Write Cycle Time Word, Page: 25ns
Access Time: 20ns
Voltage Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Product Advantages
Reliable SLC NAND flash technology for enhanced data retention and endurance
Compact 63-VFBGA package for space-constrained designs
Wide operating temperature range suitable for industrial and automotive applications
Fast read/write access times for efficient data transfer
Key Reasons to Choose This Product
Proven reliability and performance of Toshiba Memory's NAND flash technology
Versatile compatibility for a wide range of embedded and industrial applications
Cost-effective solution for high-capacity non-volatile storage needs
Excellent thermal management capabilities for demanding environments
Quality and Safety Features
Rigorous quality control and testing processes
Compliance with industry standards and regulations
Compatibility
The TC58NYG0S3HBAI4 is compatible with a variety of embedded systems, industrial devices, and other applications requiring high-capacity non-volatile memory storage.
Application Areas
Automotive electronics
Industrial control systems
Medical devices
Consumer electronics
Telecommunications equipment
Aerospace and defense systems
Product Lifecycle
The TC58NYG0S3HBAI4 is an active product in the lineup. There are no known plans for discontinuation at this time. Customers are advised to check with our website's sales team for the latest product availability and information on any potential alternative models.