Manufacturer Part Number
IS61WV51216BLL-10TLI
Manufacturer
Integrated Silicon Solution Inc.
Introduction
High-speed SRAM memory chip designed for electronic applications requiring fast access and high bandwidth.
Product Features and Performance
Volatile memory type
Asynchronous SRAM technology
8Mbit memory size
512K x 16 memory organization
Parallel memory interface
10ns write cycle time
10ns access time
4V to 3.6V supply voltage range
Surface mount mounting type
44-TSOP II package
Product Advantages
Quick data access and processing capabilities
Wide voltage operation range
High-temperature operational range
Suitable for high-performance computing and embedded systems
Ease of integration with surface mount technology
Key Technical Parameters
Memory Size: 8Mbit
Organization: 512K x 16
Interface Type: Parallel
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Supply Voltage: 2.4V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
Robust operational temperature range
Designed for reliable performance in industrial applications
Compliant with industry standards for SRAM
Compatibility
Compatible with systems requiring 512K x 16 memory organization
Interfacing with standard parallel memory interfaces
Application Areas
Embedded systems
High-performance computing
Telecommunications
Networking hardware
Industrial automation
Product Lifecycle
Active
Not nearing discontinuation
Replacements or upgrades available as the technology advances
Several Key Reasons to Choose This Product
Fast access times for rapid data retrieval and storage
Suitable for a wide range of supply voltages
Operable in extreme temperature conditions
Conforms to standard packaging for easy integration
Versatile use across various computing and industrial applications
Reliable manufacturer with a good track record in memory solutions
IS61WV51216EEBLL-10TLI-TRISSI, Integrated Silicon Solution Inc8Mb,High-Speed/Low Power,Async w