Manufacturer Part Number
IS61WV51216EEBLL-10BLI
Manufacturer
Integrated Silicon Solution Inc.
Introduction
High-Speed Asynchronous SRAM Memory Chip
Product Features and Performance
Volatile Memory Type
Asynchronous SRAM Technology
8Mbit Memory Size
512K x 16 Memory Organization
Parallel Memory Interface
10ns Write Cycle Time
10ns Access Time
Surface Mount Mounting Type
Product Advantages
Fast Access and Write Cycle Times
Available in a 48-TFBGA Package
Wide Operating Temperature Range
Key Technical Parameters
Memory Format: SRAM
Voltage Supply: 2.4V to 3.6V
Operating Temperature: -40°C to 85°C
Package/Case: 48-TFBGA
Quality and Safety Features
Robust Error Checking
Stable Performance in Extreme Conditions
Compatibility
Compatible with a Wide Range of Microcontrollers and Digital Signal Processors
Application Areas
Telecommunications
Networking
Industrial Control Systems
Medical Equipment
Automotive Electronics
Product Lifecycle
Active Product Status
Not Nearing Discontinuation
Replacements and Upgrades Available
Several Key Reasons to Choose This Product
Ultra-Low Operation and Standby Power
High Reliability and Endurance
Enhanced Data Retention
Ease of Integration with Various Systems
Support for Industrial Temperature Range
IS61WV51216BLL-10TLIntegrated Silicon Solution, Inc. (ISSI)
IS61WV51216EDBLL-10BLIISSI, Integrated Silicon Solution IncIC SRAM 8MBIT PARALLEL 48TFBGA
IS61WV5128BLL-10BLIISSI, Integrated Silicon Solution IncIC SRAM 4MBIT PARALLEL 36TFBGA