Manufacturer Part Number
IS61WV25616EDBLL-10BLI
Manufacturer
Integrated Silicon Solution
Introduction
High-speed 4Mbit SRAM memory chip suitable for a variety of digital applications.
Product Features and Performance
Volatile memory type
Asynchronous SRAM technology
4Mbit memory size
256K x 16 memory organization
Parallel memory interface
10 ns write cycle time
10 ns access time
Product Advantages
Fast read and write speeds
Stable and reliable performance
Moderate density for a range of applications
Key Technical Parameters
Memory Format: SRAM
Supply Voltage: 2.4V to 3.6V
Operating Temperature range: -40°C to 85°C
Surface mount 48-TFBGA package
Quality and Safety Features
Robust operating temperature range
Complies with industry-standard quality and safety norms
Compatibility
Industry-standard parallel interface
Application Areas
Embedded systems
Computing
Telecommunications
Consumer electronics
Product Lifecycle
Product Status: Active
Not nearing discontinuation
Availability of replacements or upgrades likely to be good
Several Key Reasons to Choose This Product
Quick access time and write cycle time enhancing system performance
Wide voltage range offering flexibility in different power environments
Large operating temperature window suiting various industrial applications
Industry-standard packaging for easier integration into existing designs
IS61WV20488FBLL-10TLI-TRISSI, Integrated Silicon Solution Inc16Mb,High-Speed,Async,2Mbx8,10ns
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