Manufacturer Part Number
IS61WV25632BLL-10BLI
Manufacturer
Integrated Silicon Solution
Introduction
High-speed SRAM memory chip designed for high-performance computing applications
Product Features and Performance
Memory Type: Volatile SRAM
Memory Format: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Organization: 256K x 32
Parallel Memory Interface
Write Cycle Time: 10ns
Access Time: 10 ns
Operating Temperature Range: -40°C to 85°C
Robust Error Management
Low Power Consumption
Product Advantages
Fast Write Cycle and Access Times for quick data retrieval
Large Temperature Range ensuring reliability in various environments
High Density for improved storage capacity
Stable Operation with broad voltage supply range
Key Technical Parameters
Voltage Supply Range: 2.4V to 3.6V
Parallel Memory Interface for straightforward integration
Access Time: 10 ns for rapid data access
Package: 90-TFBGA for efficient space utilization
Quality and Safety Features
Extended Operating Temperature ensures performance under extreme conditions
Robust packaging for improved durability and reliability
Lead-free construction for environmental safety
Compatibility
Standard Surface Mount compatible with common PCB technology
Supports Wide Range of Voltage for integration with various circuit designs
Application Areas
Advanced Computing Systems
Networking and Communication Devices
Gaming Consoles
Industrial Control Systems
Product Lifecycle
Status: Active
Support and availablity continuing, no near-term discontinuation
Replacements or upgrades may be considered under new product developments
Several Key Reasons to Choose This Product
Cutting-edge performance with 10ns Access Time
Stable and reliable operation across various temperature and voltage conditions
Easy to install with Surface Mount Technology
Broad applicability in advanced technological solutions
Ongoing product support and active lifecycle status
High density and efficient packaging for space-sensitive applications