Manufacturer Part Number
VID100-06P1
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
IGBT (Insulated Gate Bipolar Transistor) Module
Product Features and Performance
High power density
Low conduction and switching losses
Capable of handling high currents and voltages
Wide operating temperature range (-40°C to 150°C)
Product Advantages
Improved efficiency and reliability
Compact and space-saving design
Suitable for high-power applications
Key Technical Parameters
IGBT Type: Non-Punch Through (NPT)
Input Capacitance (Cies): 4.2 nF @ 25 V
Collector-Emitter Breakdown Voltage (Max): 600 V
Collector Current (Max): 93 A
Collector-Emitter Saturation Voltage (Max): 2.8 V @ 15 V, 100 A
Collector Cutoff Current (Max): 1.4 mA
Quality and Safety Features
Integrated NTC thermistor for temperature monitoring
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of high-power electronic applications
Application Areas
Industrial motor drives
Power supplies
Inverters and converters
Welding equipment
Heating, ventilation, and air conditioning (HVAC) systems
Product Lifecycle
Currently available
No information on discontinuation or replacement plans
Key Reasons to Choose This Product
High power handling capability
Efficient performance with low losses
Wide operating temperature range
Integrated safety features for reliable operation
Compact and space-saving design