Manufacturer Part Number
VID75-12P1
Manufacturer
IXYS Corporation
Introduction
High power density insulated gate bipolar transistor (IGBT) module
Product Features and Performance
Designed for high-frequency switching applications
Optimized for low switching and conduction losses
Compact and robust ECO-PAC2 package
Excellent thermal management
Product Advantages
High power and current handling capability
Low on-state voltage drop
Fast switching speed
Reliable thermal performance
Key Technical Parameters
IGBT Type: Non-Punch Through (NPT)
Input Voltage: 1200 V
Max Collector Current: 92 A
On-state Voltage Drop: 3.2 V @ 15 V, 75 A
Input Capacitance: 3.3 nF @ 25 V
Operating Temperature: -40°C to 150°C
Quality and Safety Features
Built-in NTC thermistor for temperature monitoring
Reinforced insulation for high voltage safety
Compatibility
Suitable for a variety of high-power, high-frequency applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Induction heating
Product Lifecycle
Current production model, no discontinuation plans
Replacement and upgrade options available
Several Key Reasons to Choose This Product
Robust and reliable performance in high-power applications
Optimized for efficiency with low losses
Compact and thermally efficient package design
Wide operating temperature range
High quality and safety features