Manufacturer Part Number
FF225R12ME4_B11
Manufacturer
Infineon Technologies
Introduction
The FF225R12ME4_B11 is a discrete semiconductor product from Infineon Technologies, specifically a Trench Field Stop IGBT (Insulated Gate Bipolar Transistor) module.
Product Features and Performance
Trench Field Stop IGBT technology
Half-bridge configuration
High power density of 1050 W
Operating temperature range of -40°C to 150°C (TJ)
Input capacitance (Cies) of 13 nF @ 25 V
Collector-emitter breakdown voltage (Vces) of 1200 V
Collector current (Ic) of up to 320 A
Collector-emitter saturation voltage (Vce(on)) of 2.15 V @ 15 V, 225 A
Collector cutoff current (Ic(off)) of up to 3 mA
Integrated NTC thermistor for temperature monitoring
Product Advantages
Efficient power conversion and control
Robust and reliable performance
Compact and space-saving design
Versatile application possibilities
Key Technical Parameters
IGBT Type: Trench Field Stop
Input: Standard
Configuration: Half Bridge
Package: AG-ECONOD-3-2 (Module)
Quality and Safety Features
Stringent quality control and testing procedures
Compliance with relevant safety standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Motor drives
Power supplies
Renewable energy systems
Industrial automation
Household appliances
Product Lifecycle
The FF225R12ME4_B11 is an active product in Infineon's portfolio.
Replacement or upgrade options may be available, depending on specific application requirements.
Several Key Reasons to Choose This Product
High power density and efficiency
Robust and reliable performance
Versatile application possibilities
Comprehensive safety and quality features
Backed by Infineon's expertise and technology leadership
