Manufacturer Part Number
CM600HB-24A
Manufacturer
Powerex, Inc.
Introduction
This product is a discrete semiconductor device that belongs to the Transistors - IGBTs - Modules category.
Product Features and Performance
Operates within a wide temperature range of -40°C to 150°C (TJ)
Capable of handling a maximum power of 3670 W
Standard input configuration
Single configuration
Input capacitance (Cies) of 105 nF @ 10 V
Maximum collector-emitter breakdown voltage of 1200 V
No NTC thermistor
Maximum collector current (Ic) of 600 A
Maximum collector-emitter saturation voltage (Vce(on)) of 3 V @ 15 V, 600 A
Maximum collector cutoff current of 1 mA
Chassis mount type
Product Advantages
Wide operating temperature range
High power handling capability
Standard and single configuration options
Low input capacitance
High voltage and current ratings
Key Technical Parameters
Power: 3670 W (max)
Input Capacitance (Cies): 105 nF @ 10 V
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 600 A
Vce(on) (Max) @ Vge, Ic: 3 V @ 15 V, 600 A
Current Collector Cutoff (Max): 1 mA
Quality and Safety Features
RoHS non-compliant
Compatibility
This product is a module-type IGBT device.
Application Areas
Suitable for applications that require high-power, high-voltage, and high-current semiconductor devices.
Product Lifecycle
The current status and availability of this product are unknown.
Several Key Reasons to Choose This Product
Wide operating temperature range
High power handling capability
Standard and single configuration options
Low input capacitance
High voltage and current ratings