Manufacturer Part Number
CM600HA-5F
Manufacturer
Powerex, Inc.
Introduction
High-power discrete semiconductor product
Transistor IGBT (Insulated Gate Bipolar Transistor) module
Product Features and Performance
Trench IGBT technology
Standard input configuration
Single module design
High collector-emitter breakdown voltage (250V)
High collector current rating (600A)
Low collector-emitter saturation voltage (1.7V)
Wide operating temperature range (-40°C to 150°C)
High power handling capacity (960W)
Product Advantages
High efficiency and reliability
Compact and robust module design
Suitable for high-power applications
Key Technical Parameters
IGBT Type: Trench
Input Configuration: Standard
Package: Module
Operating Temperature: -40°C to 150°C
Power Rating: 960W
Collector-Emitter Breakdown Voltage: 250V
Collector Current: 600A
Collector-Emitter Saturation Voltage: 1.7V
Quality and Safety Features
RoHS non-compliant
Compatibility
Suitable for high-power applications requiring IGBTs
Application Areas
Industrial power electronics
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Several Key Reasons to Choose This Product
High power handling capability (960W)
Robust and reliable trench IGBT technology
Wide operating temperature range (-40°C to 150°C)
Low collector-emitter saturation voltage (1.7V) for high efficiency
Compact and modular design for easy integration
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