Manufacturer Part Number
MIEB101H1200EH
Manufacturer
IXYS Corporation
Introduction
Discrete semiconductor product
IGBT transistor module
Product Features and Performance
Supports full bridge inverter configuration
High input capacitance of 7.43 nF at 25V
High collector-emitter breakdown voltage of 1200V
High maximum collector current of 183A
Low collector-emitter saturation voltage of 2.2V at 15V, 100A
High maximum collector cutoff current of 300A
Wide operating temperature range of -40°C to 125°C
Product Advantages
Robust and reliable performance
Efficient power conversion
Suitable for high-power applications
Key Technical Parameters
Voltage: 1200V
Current: 183A
Power: 630W
Package: E3
Quality and Safety Features
RoHS3 compliant
No NTC thermistor
Compatibility
Chassis mount installation
Application Areas
Inverters
Converters
Motor drives
Power supplies
Product Lifecycle
Current product
Replacement or upgrade options available
Key Reasons to Choose This Product
High power handling capability
Reliable and robust performance
Efficient power conversion
Wide operating temperature range
RoHS3 compliance