Manufacturer Part Number
MIXA60HU1200VA
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically an IGBT (Insulated Gate Bipolar Transistor) module from IXYS Corporation.
Product Features and Performance
IGBT module with 2 independent IGBT switches
Rated for a maximum collector current of 85A
Voltage rating of 1200V
Power rating of 290W
Operating temperature range of -40°C to 150°C (TJ)
IGBT type is PT (Punch-Through)
Standard input configuration
Product Advantages
Compact and efficient power switching solution
Suitable for a wide range of applications due to the high voltage and current ratings
Able to operate in harsh environments with the extended temperature range
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 1200V
Collector Current (Max): 85A
Collector-Emitter Saturation Voltage (Max): 2.1V @ 15V, 55A
Collector Current Cut-off (Max): 500A
Quality and Safety Features
RoHS3 compliant, ensuring environmental responsibility
Chassis mount design for secure installation
Compatibility
V1A-PAK package
Application Areas
Power electronics systems
Motor drives
Inverters
Industrial and commercial applications
Product Lifecycle
Currently in production
No information on upcoming discontinuation or replacement models
Key Reasons to Choose This Product
High power and voltage capabilities
Efficient and reliable performance
Suitable for a wide range of applications
Robust design for harsh environments
RoHS compliance for environmental responsibility
MIXA61H1200EDIXYSIGBT MODULE 1200V 85A 290W E2