Manufacturer Part Number
MIXA450PF1200TSF
Manufacturer
IXYS Corporation
Introduction
High-performance IGBT module for industrial power conversion applications
Product Features and Performance
Insulated Gate Bipolar Transistor (IGBT) design
Power rating up to 2100 W
PT (punch-through) IGBT technology
Half-bridge configuration
Wide operating temperature range of -40°C to 150°C
Low collector-emitter saturation voltage (Vce(on))
High collector current rating up to 650 A
Integrated NTC thermistor for temperature monitoring
Product Advantages
High power density and efficiency
Reliable and robust performance
Thermal management capabilities
Easy integration into power electronic systems
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCES): 1200 V
Collector Current (IC): 650 A (max)
Collector-Emitter Saturation Voltage (VCE(on)): 2.15 V @ 15 V, 450 A
Collector Cut-off Current (ICES): 1 mA (max)
Quality and Safety Features
RoHS3 compliant
Chassis mount package design for secure installation
Compatibility
Suitable for a wide range of industrial power conversion applications
Application Areas
Motor drives
Power supplies
Welding equipment
Renewable energy systems
Industrial automation
Transportation systems
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available from IXYS Corporation
Several Key Reasons to Choose This Product
High power handling capability
Excellent thermal management
Reliable and robust IGBT design
Easy integration into power electronic systems
Compliance with RoHS3 regulations
MIXA61H1200EDIXYSIGBT MODULE 1200V 85A 290W E2