Manufacturer Part Number
MIXA61H1200ED
Manufacturer
IXYS Corporation
Introduction
The MIXA61H1200ED is a discrete semiconductor product, specifically an IGBT (Insulated-Gate Bipolar Transistor) module from IXYS Corporation.
Product Features and Performance
Rated for 1200V collector-emitter voltage
Supports up to 85A collector current
Maximum collector-emitter saturation voltage of 2.1V at 15V gate voltage and 55A collector current
Maximum collector cutoff current of 500A
Designed for use in full bridge inverter configurations
Operates in a temperature range of -40°C to 125°C
Product Advantages
Robust and reliable IGBT performance
Suitable for high-power industrial applications
Efficient power conversion and control
Wide operating temperature range
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 1200V
Collector Current (Max): 85A
Collector-Emitter Saturation Voltage (Max): 2.1V @ 15V, 55A
Collector Cutoff Current (Max): 500A
Power Dissipation (Max): 290W
Quality and Safety Features
RoHS3 compliant
Chassis-mount package
Compatibility
Designed for use in full bridge inverter configurations
Application Areas
Suitable for a wide range of industrial power conversion and control applications, such as motor drives, power supplies, and renewable energy systems.
Product Lifecycle
The MIXA61H1200ED is an active product in IXYS Corporation's portfolio, and there are no indications of it being discontinued.
Several Key Reasons to Choose This Product
Robust and reliable IGBT performance
High voltage and current handling capabilities
Efficient power conversion and control
Wide operating temperature range
RoHS3 compliance for environmental sustainability
Chassis-mount package for easy integration
