Manufacturer Part Number
FMG2G100US60
Manufacturer
onsemi
Introduction
IGBT transistor module designed for industrial and power electronics applications
Product Features and Performance
Capable of handling high power up to 400W
Operates in a wide temperature range of -40°C to 150°C
Half-bridge configuration with low input capacitance of 10.84 nF
High voltage rating of 600V collector-emitter breakdown voltage
High current handling capacity of up to 100A continuous, 250A peak
Product Advantages
Robust and reliable performance
Efficient power handling
Suitable for a wide range of applications
Key Technical Parameters
Collector-emitter breakdown voltage: 600V
Collector current (max): 100A continuous, 250A peak
Input capacitance (Cies): 10.84 nF
On-state voltage (Vce(on)): 2.8V @ 15V, 100A
Quality and Safety Features
Chassis mount package for secure installation
Operating temperature range: -40°C to 150°C
Compatibility
Suitable for industrial and power electronics applications
Application Areas
Industrial motor drives
Power inverters
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating systems
Product Lifecycle
Currently available, no discontinuation plans
Key Reasons to Choose This Product
High power handling capability up to 400W
Wide operating temperature range
Robust and reliable performance
Efficient power conversion
Suitable for a variety of industrial and power electronics applications