Manufacturer Part Number
FMG2G200US60
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product - Transistors - IGBTs - Modules
Product Features and Performance
Rated for 695 W of power
Half-bridge configuration
Operates from -40°C to 150°C junction temperature
600 V collector-emitter breakdown voltage
200 A maximum collector current
7 V maximum collector-emitter voltage drop at 15 V gate voltage and 200 A collector current
250 A maximum collector cutoff current
Chassis mount packaging
Product Advantages
High power density
Wide operating temperature range
Low collector-emitter voltage drop
High collector current capability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 200 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
Current Collector Cutoff (Max): 250 A
Power Max: 695 W
Operating Temperature: -40°C ~ 150°C (TJ)
Quality and Safety Features
Reliable performance in high-power and high-temperature applications
Compatibility
Suitable for use in various power conversion and control applications
Application Areas
Power conversion and control systems
Industrial equipment
Renewable energy systems
Motor drives
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement or upgrade options may be available from onsemi
Key Reasons to Choose This Product
High power density and efficiency
Wide operating temperature range
Low on-state voltage drop
High collector current capability
Reliable performance in demanding applications
