Manufacturer Part Number
FMG2G400US60
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a transistor in the IGBT (Insulated Gate Bipolar Transistor) module category.
Product Features and Performance
Operates in the temperature range of -40°C to 150°C (TJ)
Handles a maximum power of 1136 W
Configured as a half-bridge topology
Maximum collector-emitter breakdown voltage of 600 V
No NTC (Negative Temperature Coefficient) thermistor included
Maximum collector current (IC) of 400 A
Maximum collector-emitter saturation voltage (VCE(on)) of 2.7 V at 15 V gate-emitter voltage and 400 A collector current
Maximum collector cutoff current of 250 A
Chassis mount package (7PM-IA)
Product Advantages
High power handling capability
Wide operating temperature range
Robust half-bridge configuration
High voltage and current ratings
Key Technical Parameters
Manufacturer Part Number: FMG2G400US60
Package: 7PM-IA
Power Rating: 1136 W
Voltage Rating: 600 V
Current Rating: 400 A
Quality and Safety Features
Compliance with industry standards for safety and reliability
Compatibility
This product is suitable for a variety of power electronics applications that require high-performance IGBT modules.
Application Areas
Industrial motor drives
Power supplies
Renewable energy systems
Welding equipment
Other high-power electronics applications
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Robust half-bridge configuration
High voltage and current ratings
Compliance with industry standards for safety and reliability
Suitability for a variety of power electronics applications
