Manufacturer Part Number
FMG2G50US120
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistor IGBT Module
Product Features and Performance
Operating Temperature Range: -40°C to 150°C (TJ)
Maximum Power: 320W
Input: Standard
Configuration: Half Bridge
Maximum Collector-Emitter Breakdown Voltage: 1200V
No NTC Thermistor
Maximum Collector Current (Ic): 50A
Maximum Collector-Emitter Saturation Voltage (Vce(on)): 3V @ 15V, 50A
Maximum Collector Cutoff Current: 3mA
Chassis Mount
Product Advantages
High power handling capability
Wide operating temperature range
Robust design for demanding applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 50A
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
Current Collector Cutoff (Max): 3mA
Quality and Safety Features
Designed for reliable and safe operation
Compatibility
Compatible with a variety of industrial and power electronics applications
Application Areas
Suitable for use in a wide range of power electronics and industrial applications
Product Lifecycle
Currently available, no information on discontinuation or replacements
Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Robust design for demanding applications
Reliable and safe operation
Compatibility with a variety of applications
