Manufacturer Part Number
FMG2G300US60E
Manufacturer
onsemi
Introduction
This is an IGBT (Insulated Gate Bipolar Transistor) module from onsemi, a leading semiconductor manufacturer.
Product Features and Performance
High-power handling capacity up to 892W
Half-bridge configuration
Wide operating temperature range of -40°C to 150°C
High collector current rating of up to 300A
Low collector-emitter saturation voltage (Vce(on)) of 2.7V at 15V gate voltage and 300A collector current
High collector current cutoff capability of up to 250A
Product Advantages
Efficient power conversion and control
Reliable high-temperature operation
Compact and robust design
Suitable for a variety of high-power applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
NTC Thermistor: No
Mounting Type: Chassis Mount
Quality and Safety Features
Meets industry standards for quality and safety
Compatibility
Compatible with a wide range of power electronic systems and applications
Application Areas
Industrial motor drives
Power inverters
Uninterruptible power supplies (UPS)
Welding equipment
Other high-power electronic systems
Product Lifecycle
This product is currently in active production and there are no plans for discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Robust and reliable performance in high-power applications
Efficient power conversion with low saturation voltage
Wide operating temperature range for versatile use
Compact and easy to integrate design
Backed by onsemi's expertise in semiconductor technology
FMG2G300LS60EonsemiIGBT MODULE 600V 300A 892W 7PMHA