FMG2G300US60E - onsemi

Manufacturer Part Number

FMG2G300US60E

Manufacturer

onsemi

Introduction

This is an IGBT (Insulated Gate Bipolar Transistor) module from onsemi, a leading semiconductor manufacturer.

Product Features and Performance

High-power handling capacity up to 892W

Half-bridge configuration

Wide operating temperature range of -40°C to 150°C

High collector current rating of up to 300A

Low collector-emitter saturation voltage (Vce(on)) of 2.7V at 15V gate voltage and 300A collector current

High collector current cutoff capability of up to 250A

Product Advantages

Efficient power conversion and control

Reliable high-temperature operation

Compact and robust design

Suitable for a variety of high-power applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

NTC Thermistor: No

Mounting Type: Chassis Mount

Quality and Safety Features

Meets industry standards for quality and safety

Compatibility

Compatible with a wide range of power electronic systems and applications

Application Areas

Industrial motor drives

Power inverters

Uninterruptible power supplies (UPS)

Welding equipment

Other high-power electronic systems

Product Lifecycle

This product is currently in active production and there are no plans for discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

Robust and reliable performance in high-power applications

Efficient power conversion with low saturation voltage

Wide operating temperature range for versatile use

Compact and easy to integrate design

Backed by onsemi's expertise in semiconductor technology