Manufacturer Part Number
MID400-12E4
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors IGBTs Modules
Product Features and Performance
1700 W power rating
NPT IGBT type
17 nF input capacitance at 25 V
1200 V collector-emitter breakdown voltage
420 A maximum collector current
8 V maximum collector-emitter saturation voltage at 15 V gate-emitter voltage and 300 A collector current
3 mA maximum collector cutoff current
Chassis mount
Product Advantages
High power handling capability
Low input capacitance
High voltage and current ratings
Low collector-emitter saturation voltage
Chassis mount design for easy installation
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 420 A
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
Current Collector Cutoff (Max): 3.3 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Quality and Safety Features
Manufacturer's packaging: Y3-Li
Compatibility
Supplier Device Package: Y3-Li
Application Areas
Suitable for a variety of high-power electronic applications
Product Lifecycle
Current product, no information on discontinuation or replacements
Key Reasons to Choose
High power handling capability
Low input capacitance for efficient operation
High voltage and current ratings for versatile applications
Low collector-emitter saturation voltage for reduced power losses
Chassis mount design for easy installation