Manufacturer Part Number
MID145-12A3
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor IGBT Module
Product Features and Performance
ROHS3 Compliant
NPT IGBT Type
Standard Input
Single Configuration
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 160 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Current Collector Cutoff (Max): 6 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Power Max: 700 W
Product Advantages
High power handling capability
Low conduction losses
Wide operating temperature range
Key Technical Parameters
IGBT Type: NPT
Input: Standard
Configuration: Single
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 160 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Current Collector Cutoff (Max): 6 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Power Max: 700 W
Quality and Safety Features
ROHS3 Compliant
Compatibility
Chassis Mount
Application Areas
Power electronics
Industrial motor drives
Renewable energy systems
Welding equipment
Product Lifecycle
Current production model
Replacement models or upgrades may be available in the future
Key Reasons to Choose This Product
High power handling capability up to 700W
Low conduction losses for efficiency
Wide operating temperature range of -40°C to 150°C
ROHS3 compliant for environmental safety
Chassis mount for easy installation