Manufacturer Part Number
MID150-12A4
Manufacturer
IXYS Corporation
Introduction
Industrial grade power semiconductor module
Designed for medium power applications
Product Features and Performance
IGBTs with Non-Punch Through (NPT) technology
Optimized for medium power applications
Collector-Emitter Voltage (Vce) up to 1200V
Collector Current (Ic) up to 180A
Low on-state voltage (Vce(on)) of 2.7V @ 100A
Operating junction temperature up to 150°C
Product Advantages
Robust and reliable performance
Efficient power conversion
Wide operating temperature range
Compact and easy to integrate design
Key Technical Parameters
IGBT Type: NPT
Input Configuration: Single
Input Capacitance (Cies): 6.6nF @ 25V
Collector-Emitter Breakdown Voltage (BVCES): 1200V
Collector Current (Ic): 180A
On-state Voltage (Vce(on)): 2.7V @ 15V, 100A
Collector Cutoff Current (Ic(off)): 7.5mA
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: Y3-DCB
Compatibility
Compatible with a wide range of medium power applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Renewable energy systems
Product Lifecycle
Current product
Replacements and upgrades available
Key Reasons to Choose This Product
Reliable and robust performance
Efficient power conversion with low on-state voltage
Wide operating temperature range for versatile applications
Compact and easy to integrate design
RoHS3 compliance for environmentally-friendly use