MID200-12A4 - IXYS

Manufacturer Part Number

MID200-12A4

Manufacturer

IXYS Corporation

Introduction

The MID200-12A4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module from IXYS Corporation, known for their expertise in power semiconductor solutions.

Product Features and Performance

Capable of handling up to 1130 W of power

Non-Punch-Through (NPT) IGBT technology for improved performance and reliability

Low input capacitance of 11 nF at 25 V for efficient switching

Maximum collector-emitter voltage of 1200 V

Maximum collector current of 270 A

Low on-state voltage drop of 2.7 V at 15 V gate voltage and 150 A collector current

Product Advantages

Robust and reliable design for demanding applications

Efficient power handling and switching characteristics

Compact and easy to integrate into various systems

Key Technical Parameters

Operating temperature range up to 150°C (TJ)

ROHS3 compliant

Chassis mount packaging

Quality and Safety Features

Undergoes rigorous testing and quality control measures

Designed to meet industry safety and regulatory standards

Compatibility

Compatible with various IGBT-based power electronics systems and applications

Application Areas

Industrial motor drives

Power conversion and control systems

Renewable energy systems

Uninterruptible power supplies (UPS)

Welding equipment

Product Lifecycle

Currently available and in active production

Replacement or upgrade options may be available from IXYS Corporation

Key Reasons to Choose This Product

Proven performance and reliability from a reputable manufacturer

Efficient power handling and switching characteristics

Robust design and wide operating temperature range

Compatibility with a variety of IGBT-based applications

Compliance with industry safety and regulatory standards