Manufacturer Part Number
IXTA08N100D2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Depletion Mode FET
Drain to Source Voltage (Vdss) of 1000V
Vgs (Max) of ±20V
On-Resistance (Rds On) of 21Ohm @ 400mA, 0V
Continuous Drain Current (Id) of 800mA @ 25°C
Input Capacitance (Ciss) of 325pF @ 25V
Gate Charge (Qg) of 14.6nC @ 5V
Power Dissipation (Max) of 60W
Product Advantages
High voltage handling capability
Low on-resistance
Compact surface mount package
Key Technical Parameters
MOSFET technology
TO-263-3, DPak (2 Leads + Tab) package
Operating temperature range of -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with various surface mount applications
Application Areas
Suitable for power supply, motor control, and other high voltage circuits
Product Lifecycle
Currently in active production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
Excellent high voltage handling capability
Low on-resistance for efficient power conversion
Compact and easy to integrate surface mount package
Proven MOSFET technology for reliable performance
RoHS compliance for environmentally-friendly use
IXTA150N15X4 MOSIXYS / Littelfuse