Manufacturer Part Number
IXTA10P50P
Manufacturer
IXYS Corporation
Introduction
The IXTA10P50P is a high-power, P-channel MOSFET transistor that offers high voltage, low on-resistance, and high current capabilities.
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 500V
On-Resistance (Rds(on)) of 1Ω at 5A, 10V
Continuous Drain Current (Id) of 10A at 25°C
Power Dissipation (Pd) of 300W at 25°C case temperature
Gate-to-Source Voltage (Vgs) of ±20V
Operating Temperature Range of -55°C to 150°C
Product Advantages
High voltage and current handling capability
Low on-resistance for improved efficiency
Compact TO-263-3 (D-PAK) surface mount package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
On-Resistance (Rds(on)): 1Ω @ 5A, 10V
Continuous Drain Current (Id): 10A @ 25°C
Power Dissipation (Pd): 300W @ 25°C case temperature
Gate-to-Source Voltage (Vgs): ±20V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high-reliability standards
Compatibility
Compatible with a wide range of high-power, high-voltage applications
Application Areas
Motor drives
Power supplies
Inverters
Industrial and automotive power electronics
Product Lifecycle
This product is currently in production and available.
Replacement or upgrade options may be available in the future.
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for improved efficiency
Compact surface mount package
Reliable and high-quality construction
Wide operating temperature range