Manufacturer Part Number
IXTA06N120P
Manufacturer
IXYS Corporation
Introduction
The IXTA06N120P is a high-voltage, N-channel MOSFET designed for a variety of power conversion and control applications.
Product Features and Performance
High breakdown voltage of 1200V
Low on-resistance of 32Ω at 300mA, 10V
Continuous drain current of 600mA at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 270pF at 25V
Maximum power dissipation of 42W at Tc
Product Advantages
High voltage capability
Low on-resistance for efficient power conversion
Suitable for high temperature environments
Small surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 32Ω at 300mA, 10V
Continuous Drain Current (Id): 600mA at 25°C
Input Capacitance (Ciss): 270pF at 25V
Power Dissipation (Pd): 42W at Tc
Quality and Safety Features
RoHS3 compliant
TO-263AA package
Compatibility
The IXTA06N120P is compatible with a wide range of power conversion and control applications.
Application Areas
Switch-mode power supplies
Motor drives
Industrial controls
Telecommunications equipment
Automotive electronics
Product Lifecycle
The IXTA06N120P is an active product and not nearing discontinuation. Replacement or upgraded options are available from the manufacturer.
Key Reasons to Choose This Product
High voltage capability for demanding applications
Low on-resistance for efficient power conversion
Wide operating temperature range for harsh environments
Small surface mount package for compact designs
RoHS3 compliance for environmentally-friendly applications