Manufacturer Part Number
IXGN80N60A2
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors IGBTs Modules
Product Features and Performance
Operates in temperature range of -55°C to 150°C (TJ)
Maximum power rating of 625 W
Standard input configuration
Single-chip design
Collector-Emitter Breakdown Voltage (max) of 600 V
No NTC Thermistor
Maximum Collector Current (Ic) of 160 A
Maximum Collector-Emitter Saturation Voltage (Vce(on)) of 1.35V at 15V, 80A
Maximum Collector Cutoff Current of 25 A
Chassis mount package
Product Advantages
High power handling capability
Wide operating temperature range
Robust single-chip design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 160 A
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 80A
Current Collector Cutoff (Max): 25 A
Quality and Safety Features
Complies with industry standards for quality and safety
Compatibility
Suitable for a wide range of industrial and power electronics applications
Application Areas
Industrial and power electronics systems
Motor drives
Power supplies
Welding equipment
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Several Key Reasons to Choose This Product
High power handling capability
Wide operating temperature range
Robust single-chip design
Complies with industry standards for quality and safety
Suitable for a wide range of industrial and power electronics applications
IXGP20N120A3IXYSIGBT 1200V 40A 180W TO220