Manufacturer Part Number
IXGP20N120A3
Manufacturer
IXYS Corporation
Introduction
The IXGP20N120A3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) device from IXYS Corporation, designed for a wide range of power electronics applications.
Product Features and Performance
1200V Collector-Emitter Breakdown Voltage
40A Collector Current (Max)
180W Power Handling Capability
PT (Punch-Through) IGBT Technology
Fast Switching Characteristics with Td(on/off) of 16ns/290ns
Low Vce(on) of 2.5V @ 15V, 20A
Wide Operating Temperature Range of -55°C to 150°C
Product Advantages
High Voltage and Current Handling Capability
Efficient Power Conversion with Low Conduction Losses
Fast Switching for High-Frequency Applications
Robust Design and Wide Operating Temperature Range
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 40A
Power Dissipation (Max): 180W
Gate Charge: 50nC
Collector-Emitter Saturation Voltage: 2.5V @ 15V, 20A
Quality and Safety Features
RoHS3 Compliant
TO-220-3 Package for Reliable Thermal Management
Compatibility
The IXGP20N120A3 is a direct replacement for a variety of IGBT devices in power electronics applications.
Application Areas
Motor Drives
Power Supplies
Inverters
Welding Equipment
Induction Heating
Industrial Electronics
Product Lifecycle
The IXGP20N120A3 is an actively supported product in the IXYS Corporation portfolio. Replacement and upgrade options are available for this device.
Key Reasons to Choose This Product
High Voltage and Current Handling Capability for Demanding Applications
Efficient Power Conversion with Low Conduction Losses
Fast Switching Characteristics for High-Frequency Operation
Robust Design and Wide Operating Temperature Range for Reliable Performance
RoHS3 Compliance for Environmental Responsibility
TO-220-3 Package for Ease of Integration and Thermal Management
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