Manufacturer Part Number
IXGN60N60C2D1
Manufacturer
IXYS Corporation
Introduction
High-performance Insulated Gate Bipolar Transistor (IGBT) module
Intended for use in power electronics applications
Product Features and Performance
Compact SOT-227B package
PT (punch-through) IGBT technology
Optimized for high-frequency switching
Low conduction and switching losses
High short-circuit withstand capability
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent thermal performance
Compact and space-saving design
Highly reliable operation
Efficient power conversion
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 75 A
Vce(on) (Max) @ Vge, Ic: 2.5 V @ 15 V, 50 A
Current Collector Cutoff (Max): 650 A
Input Capacitance (Cies) @ Vce: 4.75 nF @ 25 V
Power Max: 480 W
Quality and Safety Features
Robust construction for reliable operation
Compliance with relevant safety standards
Compatibility
Suitable for a variety of power electronics applications
Application Areas
Inverters
Converters
Motor drives
Welding equipment
Induction heating
Other power electronics systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Several Key Reasons to Choose This Product
Excellent thermal performance and efficiency
Compact and space-saving design
Highly reliable operation
Suitable for a wide range of power electronics applications
Backed by the expertise and support of IXYS Corporation
IXGP12N60CD1IXYSIGBT 600V 24A 100W TO220