Manufacturer Part Number
IXGN60N60
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor component, specifically an Insulated Gate Bipolar Transistor (IGBT) module.
Product Features and Performance
IGBT type: PT (Punch-Through)
Input type: Standard
Configuration: Single
Input capacitance (Cies) @ 25V Vce: 4 nF
Collector-emitter breakdown voltage (max): 600V
Collector current (max): 100A
Collector-emitter saturation voltage (max) @ 15V Vge, 60A: 1.7V
Collector current cutoff (max): 200A
Operating temperature range: -55°C to 150°C (Tj)
Power rating (max): 250W
Product Advantages
High voltage and current handling capabilities
Low collector-emitter saturation voltage for efficient power conversion
Suitable for a wide range of operating temperatures
Compact SOT-227B package for efficient PCB layout
Key Technical Parameters
Voltage: 600V (max collector-emitter breakdown voltage)
Current: 100A (max collector current)
Power: 250W (max power rating)
Package: SOT-227B
Quality and Safety Features
Chassis mount package for secure installation
No NTC thermistor included (user may add external thermistor if needed)
Compatibility
This IGBT module is suitable for use in a variety of power electronics applications.
Application Areas
Power inverters
Motor drives
Switched-mode power supplies
Industrial control systems
Product Lifecycle
This product is an active and widely used IGBT module.
Replacement or upgrade options are available from the manufacturer and third-party suppliers.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding power electronics applications
Efficient power conversion due to low collector-emitter saturation voltage
Wide operating temperature range for versatile deployment
Compact and robust SOT-227B package for effective PCB integration
Availability of replacement and upgrade options from the manufacturer and third-party suppliers.
