Manufacturer Part Number
IXGN50N120C3H1
Manufacturer
IXYS Corporation
Introduction
The IXGN50N120C3H1 is a high-performance IGBT module from IXYS Corporation, designed for a wide range of industrial and power electronics applications.
Product Features and Performance
IGBT technology with PT (Punch-Through) structure
Standard input configuration
Single-chip design
High blocking voltage of 1200 V
High collector current rating of 95 A
Low collector-emitter saturation voltage of 4.2 V @ 15 V, 40 A
Wide operating temperature range of -55°C to 150°C (TJ)
High power rating of 460 W
Product Advantages
Reliable and robust performance
Efficient power conversion
Compact and space-saving design
Suitable for various industrial applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCES): 1200 V
Collector Current (IC): 95 A
Collector-Emitter Saturation Voltage (VCE(on)): 4.2 V @ 15 V, 40 A
Input Capacitance (Cies): 4.3 nF @ 25 V
Operating Temperature Range: -55°C to 150°C (TJ)
Quality and Safety Features
ROHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of industrial and power electronics applications
Application Areas
Inverters
Converters
Motor drives
Power supplies
Industrial controls
Product Lifecycle
Currently in production
No planned discontinuation
Key Reasons to Choose This Product
High performance and reliability
Efficient power conversion
Wide operating temperature range
Compact and space-saving design
Suitable for a variety of industrial applications