MRF9060LR1 - NXP USA Inc.

Manufacturer Part Number

MRF9060LR1

Manufacturer

NXP Semiconductors

Introduction

This product is a high-power RF MOSFET transistor designed for use in wireless communications systems and other high-frequency, high-power applications.

Product Features and Performance

Capable of delivering up to 60W of output power

Operates at frequencies up to 945MHz

Features a 17dB gain

Withstands voltages up to 65V

Test current of 450mA

Tested at 26V

Product Advantages

Robust LDMOS technology provides high power handling and reliability

Suitable for use in a wide range of RF power amplifier designs

Compact NI-360 package enables efficient thermal management

Key Technical Parameters

Manufacturer Part Number: MRF9060LR1

Package: NI-360, Tape & Reel (TR)

Technology: LDMOS

Power Output: 60W

Current (Test): 450mA

Voltage (Rated): 65V

Gain: 17dB

Voltage (Test): 26V

Frequency: 945MHz

Mounting Type: Chassis Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

This RF MOSFET transistor is compatible with a variety of high-frequency, high-power wireless communication applications.

Application Areas

Wireless communications systems

RF power amplifiers

Other high-frequency, high-power applications

Product Lifecycle

This product is an active and widely used component in the industry. There are no indications of it being near discontinuation, and replacements or upgrades are readily available from the manufacturer and authorized distributors.

Key Reasons to Choose This Product

Robust LDMOS technology for high power and reliability

Capable of delivering up to 60W of output power at frequencies up to 945MHz

Compact NI-360 package for efficient thermal management

RoHS3 compliance for use in a wide range of applications

Proven performance and compatibility with various high-frequency, high-power designs